Hydrogen and H diffusion barriers in Metal-Oxide-Semiconductor (MOS) devices
Wall Forum
- !!! CANCELLED !!!
- Datum: 18.10.2017
- Uhrzeit: 15:30 - 16:30
- Vortragende(r): Ziyuan Liu
- RIKEN, Japan
- Ort: IPP Garching
- Raum: Seminarraum D3
- Gastgeber: IPP
The H diffusion in intact model MOS structures is probed by H depth profiling via resonant 15N-H nuclear reaction analysis (NRA) combined with a variety of surface-sensitive spectroscopies. It is discovered that a specific oxynitride layer observed on the near-surface region of nitride films is able to function as a potential H diffusion barrier. This ultra-thin layers are desirable in the integrated circuit processing of silicon transistors.