Publikationen von J. Roth
Alle Typen
Zeitschriftenartikel (307)
281.
Zeitschriftenartikel
85/86, S. 1145 - 1150 (1979)
Formation of Various Coatings and Their Behaviour under Particle Bombardment. Journal of Nuclear Materials 282.
Zeitschriftenartikel
34, 1, S. 76 - 78 (1979)
Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques. Applied Physics Letters 283.
Zeitschriftenartikel
82, S. 220 - 226 (1979)
Dependence of Blister-Deckeldichte and of Depth Profiles of Implanted He Ions in Nb on Angle of Incidence. Journal of Nuclear Materials 284.
Zeitschriftenartikel
85/86, S. 1077 - 1079 (1979)
Sputtering of Be and BeO by Light Ions. Journal of Nuclear Materials 285.
Zeitschriftenartikel
85/86, S. 1025 - 1029 (1979)
Radiation Induced Detrapping of Implanted Deuterium in BeO by High Energy exp.3_He and Proton Irradiation. Journal of Nuclear Materials 286.
Zeitschriftenartikel
84, S. 149 - 156 (1979)
Trapping of Deuterium Implanted in Carbon and Silicon: A Calibration for Particle-Energy Measurements in the Plasma Boundary of Tokamaks. Journal of Nuclear Materials 287.
Zeitschriftenartikel
126, 7, S. 1247 - 1252 (1979)
The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon. Journal of Electrochemical Society 288.
Zeitschriftenartikel
76/77, S. 313 - 321 (1978)
Behavior of Implanted D and He in Pyrolytic Graphite. Journal of Nuclear Materials 289.
Zeitschriftenartikel
157, S. 75 - 81 (1978)
Depth Profiling of Helium in Ni and Nb. Comparison of Different Methods. Nuclear Instruments and Methods 290.
Zeitschriftenartikel
49, 10, S. 5207 - 5212 (1978)
Epitaxial Regrowth of Ne-Implanted and Kr-Implanted Amorphous Silicon. Journal of Applied Physics 291.
Zeitschriftenartikel
49, 10, S. 5199 - 5206 (1978)
Epitaxial Regrowth of Ar-Implanted Amorphous Silicon. Journal of Applied Physics 292.
Zeitschriftenartikel
48, 11, S. 4722 - 4728 (1977)
Light-Ion Sputtering Yields for Molybdenum and Gold at Low Energies. Journal of Applied Physics 293.
Zeitschriftenartikel
149, S. 53 - 57 (1977)
The Replacement of exp.3_He Implanted in Nb by Subsequent exp.4_He Bombardement and Vice Versa. Nuclear Instruments and Methods 294.
Zeitschriftenartikel
149, S. 615 - 617 (1977)
Investigation of Dislocations by Backscattering Spectrometry and Transmission Electron Microscopy. Nuclear Instruments and Methods 295.
Zeitschriftenartikel
30, 6, S. 268 - 271 (1977)
Reduction of Ion Sputtering Yield by Special Surface Microtopography. Applied Physics Letters 296.
Zeitschriftenartikel
60, S. 321 - 329 (1976)
Measurements of the Erosion of Stainless Steel, Carbon, and SiC by Hydrogen Bombardement in the Energy Range of 0.5_keV to 7.5_keV. Journal of Nuclear Materials 297.
Zeitschriftenartikel
28, S. 307 - 312 (1976)
The Trapping of Hydrogen Ions in Zirconium for Ion Energies Between 0.3_keV and 6_keV. Institute of Physics Conference Series 298.
Zeitschriftenartikel
63, S. 115 - 119 (1976)
Trapping Coefficients of Energetic Hydrogen ( 0.3_keV - 8_keV ) in Ti at High Doses. Journal of Nuclear Materials 299.
Zeitschriftenartikel
63, S. 222 - 229 (1976)
Physical and Chemical Sputtering of Graphite and SiC by Hydrogen and Helium in the Energy Range of 600_keV to 7500_keV. Journal of Nuclear Materials 300.
Zeitschriftenartikel
63, S. 215 - 221 (1976)
Sputtering Yields of 1_keV to 20_keV Light Ions on Stainless Steel. Journal of Nuclear Materials