Hydrogen and H diffusion barriers in Metal-Oxide-Semiconductor (MOS) devices
Wall Forum
- !!! CANCELLED !!!
- Date: Oct 18, 2017
- Time: 03:30 PM - 04:30 PM (Local Time Germany)
- Speaker: Ziyuan Liu
- RIKEN, Japan
- Location: IPP Garching
- Room: Seminarraum D3
- Host: IPP
The H diffusion in intact model MOS structures is probed by H depth profiling via resonant 15N-H nuclear reaction analysis (NRA) combined with a variety of surface-sensitive spectroscopies. It is discovered that a specific oxynitride layer observed on the near-surface region of nitride films is able to function as a potential H diffusion barrier. This ultra-thin layers are desirable in the integrated circuit processing of silicon transistors.