Publikationen von J. Roth

Bohdansky, J.; Roth, J.; Brossa, F.: Formation of Various Coatings and Their Behaviour under Particle Bombardment. Journal of Nuclear Materials 85/86, S. 1145 - 1150 (1979)

Lau, S.S.; Roth, J.; et al.: Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques. Applied Physics Letters 34, 1, S. 76 - 78 (1979)

Risch, M.R.; Roth, J.; Scherzer, B.M.U.: Dependence of Blister-Deckeldichte and of Depth Profiles of Implanted He Ions in Nb on Angle of Incidence. Journal of Nuclear Materials 82, S. 220 - 226 (1979)

Roth, J.; Bohdansky, J.; Blewer, R.S.; Ottenberger, W.; Borders, J.: Sputtering of Be and BeO by Light Ions. Journal of Nuclear Materials 85/86, S. 1077 - 1079 (1979)

Scherzer, B.M.U.; Blewer, R.S.; Behrisch, R.; Schulz, R.; Roth, J.; Borders, J.; Langley, R.: Radiation Induced Detrapping of Implanted Deuterium in BeO by High Energy exp.3_He and Proton Irradiation. Journal of Nuclear Materials 85/86, S. 1025 - 1029 (1979)

Staudenmaier, G.; Roth, J.; Behrisch, R.; Bohdansky, J.; Eckstein, W.; Staib, P.; Matteson, S.; Erents, S.K.: Trapping of Deuterium Implanted in Carbon and Silicon: A Calibration for Particle-Energy Measurements in the Plasma Boundary of Tokamaks. Journal of Nuclear Materials 84, S. 149 - 156 (1979)

Wittmer, M.; Roth, J.; Mayer, J.W.: The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon. Journal of Electrochemical Society 126, 7, S. 1247 - 1252 (1979)

Langley, R.A.; Blewer, R.S.; Roth, J.: Behavior of Implanted D and He in Pyrolytic Graphite. Journal of Nuclear Materials 76/77, S. 313 - 321 (1978)

Scherzer, B.M.U.; Bay, H.L.; Behrisch, R.; Boergesen, P.; Roth, J.: Depth Profiling of Helium in Ni and Nb. Comparison of Different Methods. Nuclear Instruments and Methods 157, S. 75 - 81 (1978)

Wittmer, M.; Roth, J.; Revesz, P.; Mayer, J.W.: Epitaxial Regrowth of Ne-Implanted and Kr-Implanted Amorphous Silicon. Journal of Applied Physics 49, 10, S. 5207 - 5212 (1978)

Wittmer, M.; Roth, J.; Revesz, P.; Mayer, J.W.: Epitaxial Regrowth of Ar-Implanted Amorphous Silicon. Journal of Applied Physics 49, 10, S. 5199 - 5206 (1978)

Bay, H.L.; Roth, J.; Bohdansky, J.: Light-Ion Sputtering Yields for Molybdenum and Gold at Low Energies. Journal of Applied Physics 48, 11, S. 4722 - 4728 (1977)

Roth, J.; Scherzer, B.M.U.; Behrisch, R.; Boergesen, P.: The Replacement of exp.3_He Implanted in Nb by Subsequent exp.4_He Bombardement and Vice Versa. Nuclear Instruments and Methods 149, S. 53 - 57 (1977)

Tseng, W.F.; Gyulai, J.; Koji, T.; Lau, S.S.; Roth, J.; Mayer, J.W.: Investigation of Dislocations by Backscattering Spectrometry and Transmission Electron Microscopy. Nuclear Instruments and Methods 149, S. 615 - 617 (1977)

Ziegler, J.F.; Cuomo, J.J.; Roth, J.: Reduction of Ion Sputtering Yield by Special Surface Microtopography. Applied Physics Letters 30, 6, S. 268 - 271 (1977)

Behrisch, R.; Bohdansky, J.; Oetjen, G.H.; Roth, J.; Schilling, G.; Verbeek, H.: Measurements of the Erosion of Stainless Steel, Carbon, and SiC by Hydrogen Bombardement in the Energy Range of 0.5_keV to 7.5_keV. Journal of Nuclear Materials 60, S. 321 - 329 (1976)

Bohdansky, J.; Roth, J.; Poschenrieder, W.P.: The Trapping of Hydrogen Ions in Zirconium for Ion Energies Between 0.3_keV and 6_keV. Institute of Physics Conference Series 28, S. 307 - 312 (1976)

Bohdansky, J.; Roth, J.; Sinha, M.K.; Ottenberger, W.: Trapping Coefficients of Energetic Hydrogen ( 0.3_keV - 8_keV ) in Ti at High Doses. Journal of Nuclear Materials 63, S. 115 - 119 (1976)

Roth, J.; Bohdansky, J.; Poschenrieder, W.; Sinha, M.K.: Physical and Chemical Sputtering of Graphite and SiC by Hydrogen and Helium in the Energy Range of 600_keV to 7500_keV. Journal of Nuclear Materials 63, S. 222 - 229 (1976)

Roth, J.; Bohdansky, J.; Poschenrieder, W.; Sinha, M.K.: Sputtering Yields of 1_keV to 20_keV Light Ions on Stainless Steel. Journal of Nuclear Materials 63, S. 215 - 221 (1976)