The H diffusion in intact model MOS structures is probed by H depth profiling via resonant 15N-H nuclear reaction analysis (NRA) combined with a variety of surface-sensitive spectroscopies. It is discovered that a specific oxynitride layer observed on the near-surface region of nitride films is able to function as a potential H diffusion barrier. This ultra-thin layers are desirable in the integrated circuit processing of silicon transistors.
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